{"id":2112,"date":"2026-03-10T03:06:42","date_gmt":"2026-03-10T03:06:42","guid":{"rendered":"https:\/\/www.fuyao-quartz.com\/?post_type=product&p=2112"},"modified":"2026-03-10T03:11:52","modified_gmt":"2026-03-10T03:11:52","slug":"jgs1-jgs2-optical-grade-quartz-wafers-2-to-12-inch","status":"publish","type":"product","link":"https:\/\/www.fuyao-quartz.com\/nl\/product\/jgs1-jgs2-optical-grade-quartz-wafers-2-to-12-inch\/","title":{"rendered":"JGS1 JGS2 optische kwartsschijven van 2 tot 12 inch"},"content":{"rendered":"

Productoverzicht<\/strong><\/h2>\n

JGS1 en JGS2 kwartswafers zijn zeer zuivere gesmolten silica substraten die voornamelijk bestaan uit siliciumdioxide (SiO\u2082). Deze kwartswafers van optische kwaliteit worden veel gebruikt bij de productie van halfgeleiders, ultraviolette optische systemen, laserapparatuur en glasvezelcommunicatieapparaten.\"jgs1<\/p>\n

JGS1 kwartswafers worden geproduceerd met behulp van het chemische dampdepositieproces. Deze productiemethode zorgt voor extreem lage niveaus van metaalonzuiverheid en een zeer laag hydroxylgehalte, waardoor uitstekende transmissieprestaties in het diepe ultraviolette gebied mogelijk zijn.<\/p>\n

JGS2-kwartsschijven worden meestal vervaardigd met behulp van het waterstof-zuurstof vlamfusieproces. Vergeleken met JGS1 bevat JGS2 een hoger hydroxylgehalte, maar biedt het stabiele optische prestaties in het ultraviolette tot nabij-infrarode spectrum, terwijl het productieproces kosteneffectiever blijft.<\/p>\n

Kwartswafers zijn verkrijgbaar in diameters van 2 inch tot 12 inch en kunnen worden aangepast aan dikte, vereisten voor oppervlaktepolijsten en optische specificaties.<\/p>\n

Vergelijking van JGS1 en JGS2 kwartswafers<\/strong><\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n
Eigendom<\/th>\nJGS1 Kwarts<\/th>\nJGS2 Kwarts<\/th>\n<\/tr>\n<\/thead>\n
Productiemethode<\/td>\nChemische dampdepositie<\/td>\nWaterstof Zuurstof Vlamfusie<\/td>\n<\/tr>\n
Optisch transmissiebereik<\/td>\n185 nm tot 2500 nm<\/td>\n220 nm tot 2500 nm<\/td>\n<\/tr>\n
Overbrenging<\/td>\n>85 procent bij 185 nm (10 mm dikte)<\/td>\n>80 procent bij 220 nm (10 mm dikte)<\/td>\n<\/tr>\n
Gehalte aan metaalonzuiverheid<\/td>\nOngeveer 0,1 ppm<\/td>\nOngeveer 1 ppm<\/td>\n<\/tr>\n
Hydroxylgehalte<\/td>\nMinder dan 5 ppm<\/td>\n30 tot 50 ppm<\/td>\n<\/tr>\n
Interne defecten<\/td>\nZeer weinig bellen en strepen<\/td>\nMogelijk kleine belletjes of korrelige structuren<\/td>\n<\/tr>\n
Optische homogeniteit<\/td>\nZeer hoog<\/td>\nGoed<\/td>\n<\/tr>\n
Thermische stabiliteit<\/td>\nGoed<\/td>\nHogere thermische stabiliteit<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Fysieke en mechanische eigenschappen<\/strong><\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n
Eigendom<\/th>\nWaarde<\/th>\n<\/tr>\n<\/thead>\n
Dichtheid<\/td>\n2,2 g\/cm\u00b3<\/td>\n<\/tr>\n
Mohs hardheid<\/td>\n6 tot 7<\/td>\n<\/tr>\n
Druksterkte<\/td>\n1100 MPa<\/td>\n<\/tr>\n
Treksterkte<\/td>\n50 MPa<\/td>\n<\/tr>\n
Buigsterkte<\/td>\n65 MPa<\/td>\n<\/tr>\n
Torsiesterkte<\/td>\n30 MPa<\/td>\n<\/tr>\n
Modulus van Young<\/td>\n7,5 \u00d7 10\u2074 MPa<\/td>\n<\/tr>\n
Poissonverhouding<\/td>\n0.17<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Elektrische eigenschappen<\/strong><\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n
Eigendom<\/th>\nWaarde<\/th>\n<\/tr>\n<\/thead>\n
Di\u00eblektrische constante (10 GHz)<\/td>\n3.74<\/td>\n<\/tr>\n
Verliesfactor (10 GHz)<\/td>\n0.0002<\/td>\n<\/tr>\n
Di\u00eblektrische sterkte<\/td>\n3,7 \u00d7 10\u2077 V\/m<\/td>\n<\/tr>\n
Weerstand bij 20\u00b0C<\/td>\n1 \u00d7 10\u00b2\u2070 \u03a9-m<\/td>\n<\/tr>\n
Weerstand bij 1000\u00b0C<\/td>\n1 \u00d7 10 \u03a9-m<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Thermische eigenschappen<\/strong><\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n\n
Eigendom<\/th>\nWaarde<\/th>\n<\/tr>\n<\/thead>\n
Spanningspunt<\/td>\n1080\u00b0C<\/td>\n<\/tr>\n
Gloeipunt<\/td>\n1180\u00b0C<\/td>\n<\/tr>\n
Verzachtingspunt<\/td>\n1630\u00b0C<\/td>\n<\/tr>\n
Warmtegeleidingsvermogen (20\u00b0C)<\/td>\n1,4 W\/m-K<\/td>\n<\/tr>\n
Soortelijke warmte (20\u00b0C)<\/td>\n670 J\/kg-K<\/td>\n<\/tr>\n
Thermische uitzettingsco\u00ebffici\u00ebnt (30\u00b0C tot 600\u00b0C)<\/td>\n5.5 \u00d7 10-\u2077 \/\u00b0C<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Typische toepassingen<\/strong><\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n
Toepassingsveld<\/th>\nBeschrijving<\/th>\n<\/tr>\n<\/thead>\n
Lithografie voor halfgeleiders<\/td>\nOptische onderdelen en apparatuur voor waferverwerking<\/td>\n<\/tr>\n
Glasvezelcommunicatie<\/td>\nOptische connectoren, optische vensters, isolatoronderdelen<\/td>\n<\/tr>\n
UV-lasersystemen<\/td>\nExcimer laservensters en optische lenzen<\/td>\n<\/tr>\n
Industri\u00eble UV-verwerking<\/td>\nUV-sterilisatieapparatuur en hogedrukkwiklampen<\/td>\n<\/tr>\n
Optische instrumenten<\/td>\nLenzen, prisma's, spiegels en optische substraten<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

FAQ<\/strong><\/h1>\n

\"jgs11 Verschil tussen JGS1 en JGS2 kwartswafers ?<\/h3>\n

JGS1 kwartswafers bieden een hogere diepe ultraviolettransmissie vanwege het extreem lage gehalte aan metaalonzuiverheden en hydroxyl. JGS2 kwartswafers bieden stabiele ultraviolet- tot nabij-infraroodprestaties en zijn over het algemeen voordeliger voor standaard optische toepassingen.<\/p>\n

2 Typische toepassingen van JGS1 kwartswafers ?<\/h3>\n

JGS1 kwartswafers worden vaak gebruikt in diepe ultraviolette lithografiesystemen, optische componenten voor excimerlasers en ultraviolette optische apparatuur met hoge precisie.<\/p>\n

3 Typische toepassingen van JGS2 kwartswafers ?<\/h3>\n

JGS2 kwartswafers worden veel gebruikt in glasvezelcommunicatieapparaten, ultraviolette verwerkingsapparatuur en algemene optische componenten die een stabiele UV- tot nabij-infraroodtransmissie vereisen.<\/p>","protected":false},"excerpt":{"rendered":"

JGS1 en JGS2 kwartswafers zijn zeer zuivere gesmolten silica substraten die voornamelijk bestaan uit siliciumdioxide (SiO\u2082). Deze kwartswafers van optische kwaliteit worden veel gebruikt bij de productie van halfgeleiders, ultraviolette optische systemen, laserapparatuur en glasvezelcommunicatieapparaten.<\/p>","protected":false},"featured_media":2113,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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