FUYAO QUARTZ provides high-quality 2-inch 6H-N silicon carbide (SiC) wafers, designed as reliable substrates for advanced semiconductor and power electronic devices. Silicon carbide is a wide-bandgap semiconductor material known for its superior electrical, thermal, and mechanical properties compared with conventional silicon.
The 6H-N SiC polytype offers excellent electrical conductivity, high thermal stability, and strong resistance to harsh environments, making it suitable for power electronics, high-temperature devices, and research applications.
These wafers are manufactured with high crystal quality and low defect density, ensuring stable device fabrication performance and long-term reliability in demanding semiconductor environments.
主な特徴
High Electrical Conductivity
The N-type conductive structure provides stable carrier transport and is suitable for power electronic device fabrication.
Wide Bandgap Semiconductor
With a bandgap of approximately 3.02 eV, SiC enables operation under high voltage, high temperature, and high-frequency conditions.
High Thermal Conductivity
SiC efficiently dissipates heat generated by high-power devices, improving reliability and device lifetime.
Excellent Mechanical Strength
With a Mohs hardness around 9.2, SiC wafers exhibit strong mechanical durability and wear resistance.
High Breakdown Electric Field
SiC supports high-voltage device structures thanks to its high breakdown field strength.
Technical Specifications
| パラメータ | 仕様 |
|---|---|
| 素材 | Single Crystal Silicon Carbide |
| Polytype | 6H-N |
| 直径 | 2 inch (50.8 mm) |
| 厚さ | 350 μm or 650 μm |
| 表面仕上げ | CMP Polished Si-face |
| C-face Treatment | Mechanical Polish |
| Surface Roughness | Ra < 0.2 nm (Si-face) |
| Resistivity | 0.015 – 0.028 Ω·cm |
| Color | Transparent / Light Green |
| パッケージング | Single Wafer Container |
Material Properties of 6H-SiC
| プロパティ | 6H-SiC Value |
|---|---|
| Lattice Parameters | a = 3.073 Å, c = 15.117 Å |
| モース硬度 | ≈ 9.2 |
| 密度 | 3.21 g/cm³ |
| 熱膨張係数 | 4–5 ×10⁻⁶ /K |
| Refractive Index (750 nm) | n₀ = 2.60, nₑ = 2.65 |
| Dielectric Constant | ≈ 9.66 |
| 熱伝導率 | ~3.7–3.9 W/cm·K |
| Bandgap | 3.02 eV |
| Breakdown Electric Field | 3–5 ×10⁶ V/cm |
| Saturation Drift Velocity | 2.0 ×10⁵ m/s |
アプリケーション
Power Electronics
Used for high-power and high-voltage semiconductor devices such as diodes, MOSFETs, and power modules.
High-Temperature Electronics
Suitable for devices operating in harsh environments such as aerospace and energy systems.
Research and Semiconductor Development
Widely used as a substrate material for semiconductor research and device prototyping.
Optoelectronic Devices
Applicable in certain optical and photonic applications due to its optical transparency and high refractive index.
よくあるご質問
Q1: What is the difference between 6H-SiC and 4H-SiC wafers?
A: Both 6H-SiC and 4H-SiC are polytypes of silicon carbide with different crystal structures and electrical properties. 4H-SiC typically offers higher electron mobility and is widely used for modern power devices, while 6H-SiC provides stable conductivity and excellent thermal properties, making it suitable for certain power electronics, optoelectronic devices, and research applications.
Q2: What surface finish is provided for the SiC wafer?
A: The silicon face (Si-face) of the wafer is processed with chemical mechanical polishing (CMP) to achieve an ultra-smooth surface with roughness Ra < 0.2 nm, while the carbon face (C-face) is typically mechanically polished. This surface quality ensures compatibility with semiconductor fabrication processes and epitaxial growth requirements.
Q3: Can the wafer specifications be customized?
A: Yes. FUYAO QUARTZ provides customization options including wafer thickness, doping type, resistivity range, surface treatment, and wafer size. Custom specifications can be tailored according to semiconductor device design or research requirements.
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