{"id":2394,"date":"2026-03-12T07:07:46","date_gmt":"2026-03-12T07:07:46","guid":{"rendered":"https:\/\/www.fuyao-quartz.com\/?post_type=product&p=2394"},"modified":"2026-03-12T07:07:47","modified_gmt":"2026-03-12T07:07:47","slug":"2-inch-6h-n-silicon-carbide-sic-wafer-single-crystal-substrate-350%ce%bcm-650%ce%bcm","status":"publish","type":"product","link":"https:\/\/www.fuyao-quartz.com\/it\/product\/2-inch-6h-n-silicon-carbide-sic-wafer-single-crystal-substrate-350%ce%bcm-650%ce%bcm\/","title":{"rendered":"Wafer di carburo di silicio (SiC) da 2 pollici 6H-N - Substrato a cristallo singolo 350\u03bcm \/ 650\u03bcm"},"content":{"rendered":"

\"waferFUYAO QUARTZ provides high-quality 2-inch 6H-N silicon carbide (SiC) wafers, designed as reliable substrates for advanced semiconductor and power electronic devices. Silicon carbide is a wide-bandgap semiconductor material known for its superior electrical, thermal, and mechanical properties compared with conventional silicon.<\/p>\n

The 6H-N SiC polytype offers excellent electrical conductivity, high thermal stability, and strong resistance to harsh environments, making it suitable for power electronics, high-temperature devices, and research applications.<\/p>\n

These wafers are manufactured with high crystal quality and low defect density, ensuring stable device fabrication performance and long-term reliability in demanding semiconductor environments.<\/p>\n

Caratteristiche principali<\/h1>\n

High Electrical Conductivity
The N-type conductive structure provides stable carrier transport and is suitable for power electronic device fabrication.<\/p>\n

Wide Bandgap Semiconductor\"wafer
With a bandgap of approximately 3.02 eV, SiC enables operation under high voltage, high temperature, and high-frequency conditions.<\/p>\n

High Thermal Conductivity
SiC efficiently dissipates heat generated by high-power devices, improving reliability and device lifetime.<\/p>\n

Excellent Mechanical Strength
With a Mohs hardness around 9.2, SiC wafers exhibit strong mechanical durability and wear resistance.<\/p>\n

High Breakdown Electric Field
SiC supports high-voltage device structures thanks to its high breakdown field strength.<\/p>\n

Technical Specifications<\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Parametro<\/th>\nSpecifiche<\/th>\n<\/tr>\n<\/thead>\n
Materiale<\/td>\nSingle Crystal Silicon Carbide<\/td>\n<\/tr>\n
Polytype<\/td>\n6H-N<\/td>\n<\/tr>\n
Diametro<\/td>\n2 inch (50.8 mm)<\/td>\n<\/tr>\n
Spessore<\/td>\n350 \u03bcm or 650 \u03bcm<\/td>\n<\/tr>\n
Finitura superficiale<\/td>\nCMP Polished Si-face<\/td>\n<\/tr>\n
C-face Treatment<\/td>\nMechanical Polish<\/td>\n<\/tr>\n
Surface Roughness<\/td>\nRa < 0.2 nm (Si-face)<\/td>\n<\/tr>\n
Resistivity<\/td>\n0.015 \u2013 0.028 \u03a9\u00b7cm<\/td>\n<\/tr>\n
Color<\/td>\nTransparent \/ Light Green<\/td>\n<\/tr>\n
Imballaggio<\/td>\nSingle Wafer Container<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Material Properties of 6H-SiC<\/h1>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Propriet\u00e0<\/th>\n6H-SiC Value<\/th>\n<\/tr>\n<\/thead>\n
Lattice Parameters<\/td>\na = 3.073 \u00c5, c = 15.117 \u00c5<\/td>\n<\/tr>\n
Durezza Mohs<\/td>\n\u2248 9.2<\/td>\n<\/tr>\n
Densit\u00e0<\/td>\n3.21 g\/cm\u00b3<\/td>\n<\/tr>\n
Coefficiente di espansione termica<\/td>\n4\u20135 \u00d710\u207b\u2076 \/K<\/td>\n<\/tr>\n
Refractive Index (750 nm)<\/td>\nn\u2080 = 2.60, n\u2091 = 2.65<\/td>\n<\/tr>\n
Dielectric Constant<\/td>\n\u2248 9.66<\/td>\n<\/tr>\n
Conduttivit\u00e0 termica<\/td>\n~3.7\u20133.9 W\/cm\u00b7K<\/td>\n<\/tr>\n
Bandgap<\/td>\n3.02 eV<\/td>\n<\/tr>\n
Breakdown Electric Field<\/td>\n3\u20135 \u00d710\u2076 V\/cm<\/td>\n<\/tr>\n
Saturation Drift Velocity<\/td>\n2.0 \u00d710\u2075 m\/s<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Applicazioni<\/h1>\n

\"waferPower Electronics
Used for high-power and high-voltage semiconductor devices such as diodes, MOSFETs, and power modules.<\/p>\n

High-Temperature Electronics
Suitable for devices operating in harsh environments such as aerospace and energy systems.<\/p>\n

Research and Semiconductor Development
Widely used as a substrate material for semiconductor research and device prototyping.<\/p>\n

Optoelectronic Devices
Applicable in certain optical and photonic applications due to its optical transparency and high refractive index.<\/p>\n

FAQ<\/h1>\n

Q1: What is the difference between 6H-SiC and 4H-SiC wafers?<\/strong>
A: Both 6H-SiC and 4H-SiC are polytypes of silicon carbide with different crystal structures and electrical properties. 4H-SiC typically offers higher electron mobility and is widely used for modern power devices, while 6H-SiC provides stable conductivity and excellent thermal properties, making it suitable for certain power electronics, optoelectronic devices, and research applications.<\/p>\n

Q2: What surface finish is provided for the SiC wafer?<\/strong>
A: The silicon face (Si-face) of the wafer is processed with chemical mechanical polishing (CMP)<\/strong> to achieve an ultra-smooth surface with roughness Ra < 0.2 nm<\/strong>, while the carbon face (C-face) is typically mechanically polished. This surface quality ensures compatibility with semiconductor fabrication processes and epitaxial growth requirements.<\/p>\n

Q3: Can the wafer specifications be customized?<\/strong>
A: Yes. FUYAO QUARTZ provides customization options including wafer thickness, doping type, resistivity range, surface treatment, and wafer size. Custom specifications can be tailored according to semiconductor device design or research requirements.<\/p>","protected":false},"excerpt":{"rendered":"

FUYAO QUARTZ provides high-quality 2-inch 6H-N silicon carbide (SiC) wafers, designed as reliable substrates for advanced semiconductor and power electronic devices. Silicon carbide is a wide-bandgap semiconductor material known for its superior electrical, thermal, and mechanical properties compared with conventional silicon.<\/p>","protected":false},"featured_media":2402,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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