{"id":2988,"date":"2026-06-02T05:53:16","date_gmt":"2026-06-02T05:53:16","guid":{"rendered":"https:\/\/www.fuyao-quartz.com\/?post_type=product&p=2988"},"modified":"2026-06-02T05:53:20","modified_gmt":"2026-06-02T05:53:20","slug":"sapphire-temporary-wafer-carrier-for-advanced-semiconductor-packaging","status":"publish","type":"product","link":"https:\/\/www.fuyao-quartz.com\/cs\/product\/sapphire-temporary-wafer-carrier-for-advanced-semiconductor-packaging\/","title":{"rendered":"Do\u010dasn\u00fd nosi\u010d desti\u010dek Sapphire pro pokro\u010dil\u00e9 balen\u00ed polovodi\u010d\u016f"},"content":{"rendered":"

Do\u010dasn\u00fd nosi\u010d desti\u010dek ze saf\u00edru je pokro\u010dil\u00fd technick\u00fd substr\u00e1t ur\u010den\u00fd pro zpracov\u00e1n\u00ed ultratenk\u00fdch desti\u010dek v oblasti balen\u00ed polovodi\u010d\u016f nov\u00e9 generace. \u0160iroce se vyu\u017e\u00edv\u00e1 p\u0159i integraci 2,5D\/3D integrovan\u00fdch obvod\u016f, p\u0159i technologii TSV, RDL, balen\u00ed typu fan-out a dal\u0161\u00edch pokro\u010dil\u00fdch procesech v z\u00e1v\u011bre\u010dn\u00e9 f\u00e1zi v\u00fdroby, kter\u00e9 vy\u017eaduj\u00ed do\u010dasnou podporu desti\u010dek.<\/p>\n

Tento produkt p\u0159edstavuje vysoce tuhou, ultraplochou a tepeln\u011b stabiln\u00ed platformu pro procesy zten\u010dov\u00e1n\u00ed desti\u010dek a do\u010dasn\u00e9ho lepen\u00ed \u010di odlepov\u00e1n\u00ed. Je speci\u00e1ln\u011b navr\u017een tak, aby \u0159e\u0161il probl\u00e9my s proh\u00fdb\u00e1n\u00edm, hromad\u011bn\u00edm nap\u011bt\u00ed a mechanickou nestabilitou u ultratenk\u00fdch desti\u010dek o tlou\u0161\u0165ce pod 50 \u03bcm.<\/p>\n

\"\"<\/p>\n

\n

\"\"Probl\u00e9my v oboru<\/strong><\/span><\/h2>\n

Vzhledem k tomu, \u017ee se modern\u00ed obaly st\u00e1le v\u00edce zam\u011b\u0159uj\u00ed na vy\u0161\u0161\u00ed hustotu a ten\u010d\u00ed konstrukce, stala se nestabilita v\u00fdrobn\u00edho procesu kl\u00ed\u010dov\u00fdm omezen\u00edm.<\/p>\n

Mezi hlavn\u00ed v\u00fdzvy pat\u0159\u00ed:<\/p>\n

    \n
  • Nesoulad CTE mezi desti\u010dkou, substr\u00e1tem, mezivrstvou, podpl\u0148ovac\u00ed hmotou a formovac\u00edmi hmotami<\/li>\n
  • Hromad\u011bn\u00ed nap\u011bt\u00ed p\u0159i opakovan\u00fdch teplotn\u00edch cyklech<\/li>\n
  • Smr\u0161\u0165ov\u00e1n\u00ed lepidla p\u0159i vytvrzov\u00e1n\u00ed a deformace materi\u00e1lu<\/li>\n
  • Asymetrick\u00e1 vrstven\u00e1 struktura v balen\u00ed ultratenk\u00fdch \u010dip\u016f<\/li>\n
  • Deformace desti\u010dek vedouc\u00ed k odchylk\u00e1m v zarovn\u00e1n\u00ed a ke sn\u00ed\u017een\u00ed v\u00fdt\u011b\u017enosti<\/li>\n
  • Mechanick\u00e1 k\u0159ehkost ultratenk\u00fdch desti\u010dek p\u0159i manipulaci a p\u0159enosu<\/li>\n<\/ul>\n

    Tyto faktory maj\u00ed v\u00fdznamn\u00fd vliv na v\u00fdt\u011b\u017enost procesu, spolehlivost za\u0159\u00edzen\u00ed a efektivitu v\u00fdroby.<\/p>\n

    \n

    \"\"Materi\u00e1lov\u00e9 \u0159e\u0161en\u00ed<\/strong><\/span><\/h2>\n

    Saf\u00edr nab\u00edz\u00ed jedine\u010dnou kombinaci mechanick\u00e9 tuhosti, optick\u00e9 pr\u016fhlednosti a tepeln\u00e9 stability, co\u017e z n\u011bj \u010din\u00ed ide\u00e1ln\u00ed materi\u00e1l pro do\u010dasn\u00e9 nosi\u010de polovodi\u010dov\u00fdch desti\u010dek.<\/p>\n

    Stanov\u00ed:<\/p>\n

      \n
    • Stabiln\u00ed mechanick\u00e1 podpora pro ultratenk\u00e9 desti\u010dky<\/li>\n
    • N\u00edzk\u00e1 deformace p\u0159i tepeln\u00e9m a mechanick\u00e9m nam\u00e1h\u00e1n\u00ed<\/li>\n
    • Vysok\u00e1 kompatibilita s procesy odlepov\u00e1n\u00ed laserem<\/li>\n
    • Rovnom\u011brn\u00e9 rozlo\u017een\u00ed nap\u011bt\u00ed na podkladech s velkou plochou<\/li>\n
    • Vynikaj\u00edc\u00ed odolnost p\u0159i opakovan\u00e9m pr\u016fmyslov\u00e9m pou\u017eit\u00ed<\/li>\n<\/ul>\n
      \n

      Hlavn\u00ed v\u00fdhody z hlediska v\u00fdkonu<\/strong><\/span><\/h2>\n

      Mimo\u0159\u00e1dn\u011b vysok\u00e1 tuhost (Young\u016fv modul: 345\u2013420 GPa)<\/strong>
      \u00da\u010dinn\u011b zabra\u0148uje oh\u00fdb\u00e1n\u00ed a kroucen\u00ed desti\u010dek b\u011bhem teplotn\u00edch cykl\u016f a mechanick\u00e9ho zpracov\u00e1n\u00ed.<\/p>\n

      Vysok\u00e1 mechanick\u00e1 pevnost (tvrdost podle Vickerse: 1800\u20132200 HV)<\/strong>
      Zaji\u0161\u0165uje vysokou odolnost proti po\u0161kozen\u00ed povrchu a zaru\u010duje dlouhou \u017eivotnost i p\u0159i opakovan\u00e9m zpracov\u00e1n\u00ed.<\/p>\n

      Vysok\u00e1 optick\u00e1 propustnost (>83%, 300\u20131200 nm)<\/strong>
      Umo\u017e\u0148uje efektivn\u00ed p\u0159enos laserov\u00e9ho z\u00e1\u0159en\u00ed p\u0159i procesech odlepov\u00e1n\u00ed a je kompatibiln\u00ed s \u0159adou technologi\u00ed pro do\u010dasn\u00e9 lepen\u00ed.<\/p>\n

      Vynikaj\u00edc\u00ed rovnom\u011brnost materi\u00e1lu<\/strong>
      Zaji\u0161\u0165uje rovnom\u011brn\u00e9 rozlo\u017een\u00ed nap\u011bt\u00ed na velkoform\u00e1tov\u00fdch desti\u010dk\u00e1ch a panelech, \u010d\u00edm\u017e omezuje lok\u00e1ln\u00ed deformace.<\/p>\n

      Tepeln\u00e1 a chemick\u00e1 stabilita<\/strong>
      Zachov\u00e1v\u00e1 struktur\u00e1ln\u00ed integritu p\u0159i vysokoteplotn\u00edch procesech a v podm\u00ednk\u00e1ch chemick\u00e9ho \u010di\u0161t\u011bn\u00ed.<\/p>\n

      \n

      Technick\u00e9 specifikace<\/strong><\/span><\/h2>\n

      Rozm\u011bry desti\u010dek a panel\u016f<\/strong><\/span><\/h3>\n
      \n
      \n\n\n\n\n\n\n\n
      Parametr<\/th>\nSpecifikace<\/th>\n<\/tr>\n<\/thead>\n
      Velikost oplatky<\/td>\n20 cm \/ 30 cm<\/td>\n<\/tr>\n
      Velikost panelu<\/td>\n100 \u00d7 100 mm a\u017e 510 \u00d7 515 mm<\/td>\n<\/tr>\n
      Rozsah tlou\u0161\u0165ky<\/td>\n0,7 \u2013 2,0 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
      \n

      Rozm\u011bry a kvalita povrchu<\/strong><\/span><\/h3>\n
      \n
      \n\n\n\n\n\n\n\n\n\n
      Majetek<\/th>\nStandardn\u00ed kvalita<\/th>\nVysoce p\u0159esn\u00e1 t\u0159\u00edda<\/th>\n<\/tr>\n<\/thead>\n
      Celkov\u00e1 odchylka tlou\u0161\u0165ky (TTV)<\/td>\n\u2264 3 \u03bcm<\/td>\n\u2264 2 \u03bcm<\/td>\n<\/tr>\n
      Warp<\/td>\n\u2264 100 \u03bcm<\/td>\n\u2264 50 \u03bcm<\/td>\n<\/tr>\n
      Tolerance tlou\u0161\u0165ky<\/td>\n\u00b10,010 mm<\/td>\n\u00b10,005 mm<\/td>\n<\/tr>\n
      Drsnost povrchu (Ra)<\/td>\n< 1,0 nm<\/td>\n< 1,0 nm<\/td>\n<\/tr>\n
      \u0160kr\u00e1bat\/kopat<\/td>\n60\/40<\/td>\n40\/20<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
      \n

      Vlastnosti materi\u00e1lu<\/strong><\/span><\/h3>\n
      \n
      \n\n\n\n\n\n\n\n\n\n\n
      Majetek<\/th>\nHodnota<\/th>\n<\/tr>\n<\/thead>\n
      Young\u016fv modul<\/td>\n345\u2013420 GPa<\/td>\n<\/tr>\n
      Tvrdost podle Vickerse<\/td>\n1800\u20132200 HV<\/td>\n<\/tr>\n
      Optick\u00e1 propustnost<\/td>\n>83% (300\u20131200 nm)<\/td>\n<\/tr>\n
      Hustota<\/td>\n3,98 g\/cm\u00b3<\/td>\n<\/tr>\n
      Tepeln\u00e1 vodivost<\/td>\n30\u201340 W\/m\u00b7K<\/td>\n<\/tr>\n
      CTE (20 \u00b0C)<\/td>\n5,6\u20137,7 \u00d7 10\u207b\u2076\/K<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
      \n

      \"\"Rozsah pou\u017eit\u00ed<\/strong><\/span><\/h2>\n
        \n
      • Zpracov\u00e1n\u00ed zadn\u00ed strany ultratenk\u00fdch desti\u010dek<\/li>\n
      • Heterogenn\u00ed integrace 2,5D\/3D integrovan\u00fdch obvod\u016f<\/li>\n
      • Procesy TSV (Through-Silicon Via)<\/li>\n
      • V\u00fdroba RDL (redistribuce vrstvy)<\/li>\n
      • Do\u010dasn\u00e9 spojov\u00e1n\u00ed a odd\u011blov\u00e1n\u00ed desti\u010dek<\/li>\n
      • Balen\u00ed na \u00farovni panelu s rozv\u011btven\u00edm (FOPLP)<\/li>\n
      • Pokro\u010dil\u00e9 zten\u010dov\u00e1n\u00ed desti\u010dek (struktury <50 \u03bcm)<\/li>\n<\/ul>\n
        \n

        Technick\u00e1 hodnota<\/strong><\/span><\/h2>\n

        D\u00edky do\u010dasn\u00e9mu nosi\u010di z saf\u00edru mohou v\u00fdrobci pokro\u010dil\u00fdch obalov\u00fdch \u0159e\u0161en\u00ed dos\u00e1hnout:<\/p>\n

          \n
        • V\u00fdrazn\u00e9 sn\u00ed\u017een\u00ed proh\u00fdb\u00e1n\u00ed a deformace desti\u010dek<\/li>\n
        • Zv\u00fd\u0161en\u00e1 p\u0159esnost zarovn\u00e1n\u00ed p\u0159i mont\u00e1\u017ei sou\u010d\u00e1stek s mal\u00fdm rozte\u010dem<\/li>\n
        • Spolehliv\u00e1 manipulace s ultratenk\u00fdmi desti\u010dkami (<50 \u03bcm)<\/li>\n
        • Vy\u0161\u0161\u00ed konzistence v\u00fdt\u011b\u017enosti p\u0159i procesech na velk\u00fdch ploch\u00e1ch<\/li>\n
        • Zv\u00fd\u0161en\u00e1 opakovatelnost procesu a stabilita pr\u016fchodnosti<\/li>\n
        • Kompatibilita s heterogenn\u00edmi integra\u010dn\u00edmi platformami nov\u00e9 generace<\/li>\n<\/ul>\n
          \n

          \u010cASTO KLADEN\u00c9 DOTAZY<\/strong><\/span><\/h2>\n

          Ot\u00e1zka 1: Pro\u010d se saf\u00edr pou\u017e\u00edv\u00e1 jako materi\u00e1l pro do\u010dasn\u00e9 nosi\u010de desti\u010dek v oblasti pokro\u010dil\u00fdch balic\u00edch technologi\u00ed?<\/strong>
          Odpov\u011b\u010f: Saf\u00edr se vyzna\u010duje mimo\u0159\u00e1dnou tuhost\u00ed, tvrdost\u00ed a tepelnou stabilitou, co\u017e umo\u017e\u0148uje vynikaj\u00edc\u00ed kontrolu nad deformacemi a mechanickou spolehlivost p\u0159i zpracov\u00e1n\u00ed ultratenk\u00fdch desti\u010dek.<\/p>\n

          Ot\u00e1zka 2: Podporuje saf\u00edrov\u00fd nosi\u010d laserov\u00e9 odlepov\u00e1n\u00ed?<\/strong>
          A: Ano. D\u00edky vysok\u00e9 optick\u00e9 propustnosti v oblasti UV a\u017e st\u0159edn\u00ed infra\u010derven\u00e9 oblasti umo\u017e\u0148uje \u00fa\u010dinn\u00e9 pronik\u00e1n\u00ed laserov\u00e9ho paprsku, a je tak vhodn\u00fd pro procesy odlepov\u00e1n\u00ed za pomoci laseru.<\/p>\n

          Ot\u00e1zka 3: Lze saf\u00edrov\u00e9 nosi\u010de pou\u017e\u00edt pro balen\u00ed na \u00farovni panel\u016f?<\/strong>
          Odpov\u011b\u010f: Ano. Nosn\u00e9 desky Sapphire podporuj\u00ed form\u00e1ty s velkou plochou, vyzna\u010duj\u00ed se vynikaj\u00edc\u00ed rovinnost\u00ed a rovnom\u011brn\u00fdm rozlo\u017een\u00edm nap\u011bt\u00ed, d\u00edky \u010demu\u017e jsou vhodn\u00e9 pro technologii FOPLP a dal\u0161\u00ed pokro\u010dil\u00e9 technologie balen\u00ed na \u00farovni panel\u016f.<\/p>","protected":false},"excerpt":{"rendered":"

          Do\u010dasn\u00fd nosi\u010d desti\u010dek ze saf\u00edru je pokro\u010dil\u00fd technick\u00fd substr\u00e1t ur\u010den\u00fd pro zpracov\u00e1n\u00ed ultratenk\u00fdch desti\u010dek v oblasti balen\u00ed polovodi\u010d\u016f nov\u00e9 generace. \u0160iroce se vyu\u017e\u00edv\u00e1 p\u0159i integraci 2,5D\/3D integrovan\u00fdch obvod\u016f, p\u0159i technologii TSV, RDL, balen\u00ed typu fan-out a dal\u0161\u00edch pokro\u010dil\u00fdch procesech v z\u00e1v\u011bre\u010dn\u00e9 f\u00e1zi v\u00fdroby, kter\u00e9 vy\u017eaduj\u00ed do\u010dasnou podporu desti\u010dek.<\/p>","protected":false},"featured_media":2996,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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