{"id":2499,"date":"2026-03-09T06:17:33","date_gmt":"2026-03-09T06:17:33","guid":{"rendered":"https:\/\/www.fuyao-quartz.com\/"},"modified":"2026-03-13T06:19:08","modified_gmt":"2026-03-13T06:19:08","slug":"quartz-glass-wafers-manufacturing-process-and-key-technologies","status":"publish","type":"post","link":"https:\/\/www.fuyao-quartz.com\/cs\/quartz-glass-wafers-manufacturing-process-and-key-technologies\/","title":{"rendered":"V\u00fdrobn\u00ed proces a kl\u00ed\u010dov\u00e9 technologie k\u0159emenn\u00fdch sklen\u011bn\u00fdch pl\u00e1tk\u016f"},"content":{"rendered":"

Desky z k\u0159emenn\u00e9ho skla jsou substr\u00e1ty z oxidu k\u0159emi\u010dit\u00e9ho (SiO\u2082) s vysokou \u010distotou, kter\u00e9 se \u0161iroce pou\u017e\u00edvaj\u00ed p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f, optick\u00fdch syst\u00e9m\u016f a p\u0159esn\u00fdch elektronick\u00fdch za\u0159\u00edzen\u00ed. D\u00edky sv\u00e9 vynikaj\u00edc\u00ed tepeln\u00e9 stabilit\u011b, extr\u00e9mn\u011b n\u00edzk\u00e9mu koeficientu tepeln\u00e9 rozta\u017enosti, siln\u00e9 chemick\u00e9 odolnosti a vysok\u00e9 optick\u00e9 propustnosti hraj\u00ed desti\u010dky z k\u0159emenn\u00e9ho skla d\u016fle\u017eitou roli v pokro\u010dil\u00fdch v\u00fdrobn\u00edch oblastech, jako jsou mikroelektromechanick\u00e9 syst\u00e9my (MEMS), senzory CMOS a CCD, mikrovlnn\u00e9 obvody, za\u0159\u00edzen\u00ed internetu v\u011bc\u00ed (IoT) a laserov\u00e9 nebo optick\u00e9 komponenty.<\/p>\n\n\n\n

S rychl\u00fdm rozvojem polovodi\u010dov\u00fdch a fotonick\u00fdch technologi\u00ed se neust\u00e1le zvy\u0161uj\u00ed po\u017eadavky na v\u00fdkonnost substr\u00e1tov\u00fdch materi\u00e1l\u016f. V porovn\u00e1n\u00ed s b\u011b\u017en\u00fdmi optick\u00fdmi k\u0159emenn\u00fdmi sou\u010d\u00e1stkami vy\u017eaduj\u00ed desti\u010dky z k\u0159emenn\u00e9ho skla mnohem p\u0159\u00edsn\u011bj\u0161\u00ed normy, pokud jde o toleranci tlou\u0161\u0165ky, drsnost povrchu, rovinnost a vnit\u0159n\u00ed jednotnost materi\u00e1lu. V d\u016fsledku toho v\u00fdroba k\u0159emenn\u00fdch desti\u010dek zahrnuje \u0159adu slo\u017eit\u00fdch krok\u016f p\u0159\u00edpravy materi\u00e1lu a p\u0159esn\u00e9ho zpracov\u00e1n\u00ed.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

1. P\u0159\u00edprava surovin<\/h2>\n\n\n\n

V\u00fdchoz\u00ed materi\u00e1l pro k\u0159emenn\u00e9 sklen\u011bn\u00e9 desti\u010dky<\/a> je obvykle ingot z k\u0159emenn\u00e9ho skla. V pr\u016fmyslov\u00e9 v\u00fdrob\u011b se pou\u017e\u00edvaj\u00ed dva hlavn\u00ed typy k\u0159emenn\u00e9ho skla: plamenem taven\u00e9 k\u0159emenn\u00e9 sklo a syntetick\u00e9 k\u0159emenn\u00e9 sklo.<\/p>\n\n\n\n

K\u0159emenn\u00e9 sklo taven\u00e9 plamenem se vyr\u00e1b\u00ed taven\u00edm vysoce \u010dist\u00e9ho k\u0159emenn\u00e9ho p\u00edsku pomoc\u00ed vod\u00edko-kysl\u00edkov\u00e9ho plamene. Tato metoda je pom\u011brn\u011b ekonomick\u00e1 a \u0161iroce se pou\u017e\u00edv\u00e1 v pr\u016fmyslov\u00fdch aplikac\u00edch. Syntetick\u00e9 k\u0159emenn\u00e9 sklo se naproti tomu vyr\u00e1b\u00ed pomoc\u00ed proces\u016f chemick\u00e9ho napa\u0159ov\u00e1n\u00ed (CVD). P\u0159i t\u00e9to metod\u011b se jako prekurzor pou\u017e\u00edv\u00e1 tetrachlorid k\u0159em\u00edku (SiCl\u2084), zat\u00edmco vod\u00edk p\u016fsob\u00ed jako reduk\u010dn\u00ed \u010dinidlo. Chemickou reakc\u00ed vznik\u00e1 extr\u00e9mn\u011b \u010dist\u00fd oxid k\u0159emi\u010dit\u00fd, jeho\u017e v\u00fdsledkem je k\u0159emenn\u00e9 sklo s vynikaj\u00edc\u00ed optickou a strukturn\u00ed homogenitou.<\/p>\n\n\n\n

Pro \u0161pi\u010dkov\u00e9 polovodi\u010dov\u00e9 nebo optick\u00e9 aplikace je vnit\u0159n\u00ed rovnom\u011brnost materi\u00e1lu kritick\u00e1. Pro zlep\u0161en\u00ed rovnom\u011brnosti hustoty a odstran\u011bn\u00ed vnit\u0159n\u00edch bublinek vznikl\u00fdch p\u0159i taven\u00ed se k\u0159emenn\u00fd ingot \u010dasto podrobuje homogeniza\u010dn\u00ed \u00faprav\u011b ve vakuov\u00e9m prost\u0159ed\u00ed. Tento krok v\u00fdrazn\u011b zvy\u0161uje struktur\u00e1ln\u00ed stabilitu a optickou kvalitu materi\u00e1lu.<\/p>\n\n\n\n

2. V\u00fdroba polotovaru desti\u010dky<\/h2>\n\n\n\n

Oplatkov\u00fd polotovar se obvykle p\u0159ipravuje z v\u00e1lcov\u00fdch k\u0159emenn\u00fdch ingot\u016f o stejn\u00e9m pr\u016fm\u011bru. K v\u00fdrob\u011b t\u011bchto polotovar\u016f se b\u011b\u017en\u011b pou\u017e\u00edvaj\u00ed dv\u011b hlavn\u00ed metody: j\u00e1drov\u00e9 vrt\u00e1n\u00ed a tepeln\u00e9 ta\u017een\u00ed.<\/p>\n\n\n\n

J\u00e1drov\u00e9 vrt\u00e1n\u00ed se obvykle pou\u017e\u00edv\u00e1 k v\u00fdrob\u011b desti\u010dek o v\u011bt\u0161\u00edm pr\u016fm\u011bru. K z\u00edsk\u00e1n\u00ed v\u00e1lcov\u00fdch jader z k\u0159emenn\u00e9ho ingotu se pou\u017e\u00edv\u00e1 radi\u00e1ln\u00ed vrtac\u00ed stroj. Tato metoda umo\u017e\u0148uje efektivn\u00ed v\u00fdrobu p\u0159i zachov\u00e1n\u00ed p\u0159esn\u00e9 kontroly rozm\u011br\u016f.<\/p>\n\n\n\n

Pro men\u0161\u00ed velikosti desti\u010dek se \u010dasto pou\u017e\u00edv\u00e1 metoda tepeln\u00e9ho ta\u017een\u00ed. P\u0159i tomto postupu se k\u0159emenn\u00fd ingot zah\u0159\u00edv\u00e1 ve st\u0159edofrekven\u010dn\u00ed peci, dokud nedos\u00e1hne zm\u011bk\u010den\u00e9ho stavu. Zm\u011bkl\u00fd k\u0159emen se pot\u00e9 vytahuje do ty\u010dinkovit\u00fdch polotovar\u016f. Tato metoda m\u00e1 n\u011bkolik v\u00fdhod. Druh\u00fd vysokoteplotn\u00ed proces taven\u00ed zlep\u0161uje vnit\u0159n\u00ed kvalitu materi\u00e1lu t\u00edm, \u017ee sni\u017euje mno\u017estv\u00ed bublinek, mikrodefekt\u016f a struktur\u00e1ln\u00edch nepravidelnost\u00ed. Pr\u016fm\u011br ty\u010de lze nav\u00edc p\u0159esn\u011b kontrolovat nastaven\u00edm rychlosti ta\u017een\u00ed a rozm\u011br\u016f formy, co\u017e pom\u00e1h\u00e1 sn\u00ed\u017eit pl\u00fdtv\u00e1n\u00ed materi\u00e1lem a vyhnout se mechanick\u00e9mu nam\u00e1h\u00e1n\u00ed zp\u016fsoben\u00e9mu vrt\u00e1n\u00edm.<\/p>\n\n\n\n

3. P\u0159esn\u00e9 \u017e\u00edh\u00e1n\u00ed<\/h2>\n\n\n\n

B\u011bhem taven\u00ed, tv\u00e1\u0159en\u00ed a ta\u017een\u00ed doch\u00e1z\u00ed k nerovnom\u011brn\u00e9mu ochlazov\u00e1n\u00ed k\u0159emenn\u00e9ho skla, co\u017e vede ke vzniku vnit\u0159n\u00edch tepeln\u00fdch pnut\u00ed. Tato nap\u011bt\u00ed mohou ovlivnit n\u00e1sledn\u00e9 procesy obr\u00e1b\u011bn\u00ed a mohou tak\u00e9 sn\u00ed\u017eit optickou rovnom\u011brnost a struktur\u00e1ln\u00ed stabilitu desti\u010dky.<\/p>\n\n\n\n

K odstran\u011bn\u00ed t\u011bchto vnit\u0159n\u00edch pnut\u00ed mus\u00ed k\u0159emenn\u00e9 polotovary proj\u00edt \u0159\u00edzen\u00fdm \u017e\u00edh\u00e1n\u00edm. Postup \u017e\u00edh\u00e1n\u00ed se obvykle skl\u00e1d\u00e1 ze \u010dty\u0159 f\u00e1z\u00ed: postupn\u00e9ho zah\u0159\u00edv\u00e1n\u00ed, udr\u017eov\u00e1n\u00ed teploty, pomal\u00e9ho ochlazov\u00e1n\u00ed a kone\u010dn\u00e9ho ochlazov\u00e1n\u00ed. Pe\u010dliv\u00e1 kontrola teplotn\u00edch a \u010dasov\u00fdch parametr\u016f zaji\u0161\u0165uje \u00fa\u010dinn\u00e9 uvoln\u011bn\u00ed zbytkov\u00fdch nap\u011bt\u00ed uvnit\u0159 materi\u00e1lu, \u010d\u00edm\u017e se zvy\u0161uje mechanick\u00e1 stabilita a spolehlivost zpracov\u00e1n\u00ed.<\/p>\n\n\n\n

4. \u0158ez\u00e1n\u00ed v\u00edce dr\u00e1t\u016f<\/h2>\n\n\n\n

S rostouc\u00ed popt\u00e1vkou po k\u0159emenn\u00fdch desti\u010dk\u00e1ch p\u0159est\u00e1vaj\u00ed tradi\u010dn\u00ed metody \u0159ez\u00e1n\u00ed sta\u010dit pro velkov\u00fdrobu. Vedou tak\u00e9 ke zna\u010dn\u00e9mu pl\u00fdtv\u00e1n\u00ed materi\u00e1lem.<\/p>\n\n\n\n

Modern\u00ed v\u00fdroba k\u0159emenn\u00fdch desti\u010dek b\u011b\u017en\u011b vyu\u017e\u00edv\u00e1 technologii v\u00edcevodi\u010dov\u00e9ho \u0159ez\u00e1n\u00ed. P\u0159i tomto procesu lze jednu k\u0159emennou ty\u010dinku nebo ingot roz\u0159ezat na v\u00edce desti\u010dek sou\u010dasn\u011b pomoc\u00ed vysoce p\u0159esn\u00e9 dr\u00e1t\u011bn\u00e9 pily. Tato technika v\u00fdrazn\u011b zvy\u0161uje efektivitu v\u00fdroby a z\u00e1rove\u0148 minimalizuje ztr\u00e1ty materi\u00e1lu a zaji\u0161\u0165uje konzistentn\u00ed tlou\u0161\u0165ku pl\u00e1tk\u016f.<\/p>\n\n\n\n

5. Tvarov\u00e1n\u00ed desti\u010dek a zpracov\u00e1n\u00ed hran<\/h2>\n\n\n\n

Po na\u0159ez\u00e1n\u00ed proch\u00e1z\u00ed desti\u010dka n\u011bkolika procesy tvarov\u00e1n\u00ed, aby bylo dosa\u017eeno po\u017eadovan\u00e9 geometrie a rozm\u011brov\u00e9 p\u0159esnosti. Tyto procesy obvykle zahrnuj\u00ed brou\u0161en\u00ed povrchu, zaoblen\u00ed hran, orienta\u010dn\u00ed ploch\u00e9 nebo vrubov\u00e9 obr\u00e1b\u011bn\u00ed a sr\u00e1\u017een\u00ed.<\/p>\n\n\n\n

Povrchov\u00e9 brou\u0161en\u00ed se prov\u00e1d\u00ed za \u00fa\u010delem odstran\u011bn\u00ed v\u011bt\u0161iny stop po kr\u00e1jen\u00ed a kontroly tlou\u0161\u0165ky pl\u00e1tk\u016f. B\u011bhem tohoto kroku se zachov\u00e1v\u00e1 dostate\u010dn\u00fd p\u0159\u00eddavek na obr\u00e1b\u011bn\u00ed pro pozd\u011bj\u0161\u00ed p\u0159esn\u00e9 zpracov\u00e1n\u00ed.<\/p>\n\n\n\n

Vzhledem k tomu, \u017ee k\u0159emenn\u00e9 desti\u010dky jsou obvykle tenk\u00e9 a k\u0159ehk\u00e9, je p\u0159i zaoblov\u00e1n\u00ed hran \u010dasto do\u010dasn\u011b spojeno v\u00edce desti\u010dek, aby bylo zaji\u0161t\u011bno stabiln\u00ed a rovnom\u011brn\u00e9 brou\u0161en\u00ed. Pomoc\u00ed specializovan\u00e9ho obr\u00e1b\u011bc\u00edho za\u0159\u00edzen\u00ed nebo CNC obr\u00e1b\u011bc\u00edch center se p\u0159id\u00e1vaj\u00ed orienta\u010dn\u00ed plo\u0161ky nebo z\u00e1\u0159ezy, kter\u00e9 poskytuj\u00ed referen\u010dn\u00ed \u00fadaje pro zarovn\u00e1n\u00ed b\u011bhem v\u00fdroby za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

D\u016fle\u017eit\u00fdm krokem je tak\u00e9 zkosen\u00ed. Sni\u017euje koncentraci nap\u011bt\u00ed na hran\u00e1ch a zabra\u0148uje odlamov\u00e1n\u00ed nebo prask\u00e1n\u00ed p\u0159i n\u00e1sledn\u00e9m zpracov\u00e1n\u00ed a manipulaci.<\/p>\n\n\n\n

6. P\u0159esn\u00e9 brou\u0161en\u00ed a le\u0161t\u011bn\u00ed<\/h2>\n\n\n\n

Kone\u010dn\u00e9 kvality povrchu k\u0159emenn\u00fdch desti\u010dek se dosahuje p\u0159esn\u00fdm brou\u0161en\u00edm a le\u0161t\u011bn\u00edm. Tyto kroky se obvykle prov\u00e1d\u011bj\u00ed pomoc\u00ed oboustrann\u00fdch lapovac\u00edch a le\u0161tic\u00edch stroj\u016f.<\/p>\n\n\n\n

Jemn\u00fdm brou\u0161en\u00edm se odstran\u00ed zb\u00fdvaj\u00edc\u00ed vrstva po\u0161kozen\u00ed povrchu a zlep\u0161\u00ed se rovinnost. Le\u0161t\u011bn\u00edm se pak z\u00edsk\u00e1 velmi hladk\u00fd povrch s extr\u00e9mn\u011b n\u00edzkou drsnost\u00ed.<\/p>\n\n\n\n

Mezi b\u011b\u017en\u00e9 brusn\u00e9 materi\u00e1ly pou\u017e\u00edvan\u00e9 p\u0159i brou\u0161en\u00ed pat\u0159\u00ed karbid k\u0159em\u00edku a diamantov\u00e9 \u010d\u00e1stice. Pro le\u0161t\u011bn\u00ed se obvykle pou\u017e\u00edvaj\u00ed le\u0161tic\u00ed pr\u00e1\u0161ky oxidu ceri\u010dit\u00e9ho. Proto\u017ee k\u0159emenn\u00e9 desti\u010dky vy\u017eaduj\u00ed extr\u00e9mn\u011b vysokou kvalitu povrchu, je st\u0159edn\u00ed velikost \u010d\u00e1stic (D50) le\u0161tic\u00edho pr\u00e1\u0161ku obvykle men\u0161\u00ed ne\u017e 2 mikrometry.<\/p>\n\n\n\n

Dal\u0161\u00edm kritick\u00fdm faktorem p\u0159i le\u0161t\u011bn\u00ed je hodnota pH le\u0161tic\u00ed suspenze. Udr\u017eov\u00e1n\u00ed vhodn\u00e9ho rozmez\u00ed pH pom\u00e1h\u00e1 optimalizovat chemicko-mechanickou interakci mezi le\u0161tic\u00edmi \u010d\u00e1sticemi a k\u0159emenn\u00fdm povrchem, \u010d\u00edm\u017e se v kone\u010dn\u00e9m d\u016fsledku dos\u00e1hne vynikaj\u00edc\u00ed kvality povrchu a minim\u00e1ln\u00edch defekt\u016f.<\/p>\n\n\n\n

7. \u010ci\u0161t\u011bn\u00ed a balen\u00ed<\/h2>\n\n\n\n

Posledn\u00ed f\u00e1z\u00ed v\u00fdroby k\u0159emenn\u00fdch desti\u010dek je \u010di\u0161t\u011bn\u00ed a balen\u00ed, kter\u00e9 mus\u00ed prob\u00edhat v \u010dist\u00fdch prostor\u00e1ch.<\/p>\n\n\n\n

B\u011bhem obr\u00e1b\u011bn\u00ed mohou na povrchu desti\u010dky z\u016fstat r\u016fzn\u00e9 ne\u010distoty, jako jsou zbytky le\u0161t\u011bn\u00ed, \u010d\u00e1stice a chemick\u00e9 zbytky. K odstran\u011bn\u00ed t\u011bchto ne\u010distot se b\u011b\u017en\u011b pou\u017e\u00edvaj\u00ed ultrazvukov\u00e9 \u010distic\u00ed procesy. V z\u00e1vislosti na po\u017eadavc\u00edch z\u00e1kazn\u00edka a v\u00fdrobn\u00edch procesech mohou b\u00fdt p\u0159i ultrazvukov\u00e9m \u010di\u0161t\u011bn\u00ed zav\u00e1d\u011bny r\u016fzn\u00e9 \u010distic\u00ed prost\u0159edky, v\u010detn\u011b alkalick\u00fdch roztok\u016f, kysel\u00fdch roztok\u016f a organick\u00fdch rozpou\u0161t\u011bdel.<\/p>\n\n\n\n

Bez ohledu na metodu \u010di\u0161t\u011bn\u00ed se pro z\u00e1v\u011bre\u010dnou f\u00e1zi oplachov\u00e1n\u00ed v\u017edy pou\u017e\u00edv\u00e1 ultra\u010dist\u00e1 voda. Aby se zabr\u00e1nilo kontaminaci \u010d\u00e1sticemi, prov\u00e1d\u00ed se z\u00e1v\u011bre\u010dn\u00e9 oplachov\u00e1n\u00ed, su\u0161en\u00ed a balen\u00ed obvykle v \u010dist\u00fdch prostor\u00e1ch s \u00farovn\u00ed \u010distoty 100 nebo vy\u0161\u0161\u00ed.<\/p>\n\n\n\n

Z\u00e1v\u011br<\/h2>\n\n\n\n

V\u00fdroba k\u0159emenn\u00fdch sklen\u011bn\u00fdch desti\u010dek zahrnuje slo\u017eitou kombinaci materi\u00e1lov\u00fdch v\u011bd a p\u0159esn\u00fdch technick\u00fdch technologi\u00ed. Od synt\u00e9zy surovin a p\u0159\u00edpravy ingot\u016f a\u017e po kr\u00e1jen\u00ed, tvarov\u00e1n\u00ed, le\u0161t\u011bn\u00ed a \u010di\u0161t\u011bn\u00ed hraje ka\u017ed\u00fd krok z\u00e1sadn\u00ed roli p\u0159i ur\u010dov\u00e1n\u00ed kone\u010dn\u00e9 kvality desti\u010dek.<\/p>\n\n\n\n

S dal\u0161\u00edm v\u00fdvojem polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed, optick\u00fdch syst\u00e9m\u016f a pokro\u010dil\u00fdch sn\u00edmac\u00edch technologi\u00ed bude popt\u00e1vka po vysoce kvalitn\u00edch k\u0159emenn\u00fdch substr\u00e1tech i nad\u00e1le r\u016fst. Neust\u00e1l\u00e9 zlep\u0161ov\u00e1n\u00ed technologie zpracov\u00e1n\u00ed, p\u0159esn\u00e9ho obr\u00e1b\u011bn\u00ed a kontroly zne\u010di\u0161t\u011bn\u00ed bude i nad\u00e1le kl\u00ed\u010dov\u00fdm faktorem pro vytvo\u0159en\u00ed nov\u00e9 generace vysoce v\u00fdkonn\u00fdch k\u0159emenn\u00fdch desti\u010dek.<\/p>","protected":false},"excerpt":{"rendered":"

Quartz glass wafers are high-purity silicon dioxide (SiO\u2082) substrates widely used in semiconductor fabrication, optical systems, and precision electronic devices. Owing to their excellent thermal stability, extremely low thermal expansion coefficient, strong chemical resistance, and high optical transmission, quartz glass wafers play an important role in advanced manufacturing fields such as micro-electromechanical systems (MEMS), CMOS 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